Primary Duties & Responsibilities
Lead definition and development of new and novel III‑V process nodes for InP and GaAs technologies. Drive unit process development across epitaxy (MBE/MOCVD), lithography, etch, deposition, CMP, implant, and backend steps. Lead process technology transfers during development bringing to volume manufacturing. Partner closely with Process Engineering, Equipment Engineering, R&D, Quality, and Operations. Lead external collaborations with equipment suppliers, material vendors, and research partners. Education & Experience
Master’s or PhD in a relevant discipline. Expertise in MOCVD/MBE epitaxy, III‑V device fabrication, or photonics/RF process integration. Experience in tool evaluations, technology insertion, and supplier joint development programs. Skills
10+ years of experience in semiconductor process engi...