We are seeking a highly motivated GaN Technology Development Engineer to lead development of next-generation GaN power devices. This role focuses on unit process development, process integration, and wafer-level electrical characterization, driving technology from early concept through qualification and manufacturing readiness.

The candidate will work cross-functionally with device design, process modules, reliability, and manufacturing teams to deliver high-performance, manufacturable GaN technologies.

1. Unit Process Development

Develop and optimize GaN unit processes (e.g., lithography, etch, deposition, metallization, epitaxy) to meet device performance and reliability targets

Define process conditions, materials, and metrology requirements for each module

Execute Design of Experiments (DOE) and analyze results to establish robust process window Drive process characterization, including film, interface, and defect analysi...