Topic description

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This thesis provides an opportunity to develop statistical methods to optimize and calibrate lithography models used to generate optimal photomask designs by mean of optical proximity correction (OPC).

Microelectronic devices with high circuit density are in high demand and are extensively researched and pursued by industries. One way to achieve higher circuit density is to decrease pattern dimension or pitch. However as pattern dimension decreases, fabrication challenge increases. Resolution Enhancement Technique (RET) such as OPC has therefore to be used to generate photomask of such circ...